IEEE - Institute of Electrical and Electronics Engineers, Inc. - On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes

Author(s): Thomas Lorin ; William Vandendaele ; Romain Gwoziecki ; Yannick Baines ; Jerome Biscarrat ; Marie-Anne Jaud ; Charlotte Gillot ; Matthew Charles ; Marc Plissonnier ; G. Ghibaudo ; F. Gaillard
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2018
Volume: 6
Page(s): 956 - 964
ISSN (Electronic): 2168-6734
DOI: 10.1109/JEDS.2018.2842100
Regular:

Cathode related current collapse effect in GaN on Si Schottky barrier diodes is investigated in this paper. Capacitance and current relaxation measurements on diodes and gated-Van Der Pauw are... View More

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