IEEE - Institute of Electrical and Electronics Engineers, Inc. - 2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials

Author(s): Xinke Liu ; Hsien-Chin Chiu ; Hou-Yu Wang ; Cong Hu ; Hsiang-Chun Wang ; Hsuan-Ling Kao ; Feng-Tso Chien
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2018
Volume: 6
Page(s): 825 - 829
ISSN (Electronic): 2168-6734
DOI: 10.1109/JEDS.2018.2858294
Regular:

This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching... View More

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