IEEE - Institute of Electrical and Electronics Engineers, Inc. - An Innovative Indicator to Evaluate DRAM Cell Transistor Leakage Current Distribution

Author(s): Min Hee Cho ; Namho Jeon ; Taek Yong Kim ; Moonyoung Jeong ; Sungsam Lee ; Jong Seo Hong ; Hyeong Sun Hong ; Satoru Yamada
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2018
Volume: 6
Page(s): 494 - 499
ISSN (Electronic): 2168-6734
DOI: 10.1109/JEDS.2017.2758026
Regular:

This paper is the first to propose an innovative method for measuring variations in dynamic random access memory (DRAM) cell transistors. Structural dispersion induces an extremely high cell... View More

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