IEEE - Institute of Electrical and Electronics Engineers, Inc. - Contactless Method to Measure 2DEG Charge Density and Band Structure in HEMT Structures

Author(s): Yury Turkulets ; Ilan Shalish
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2018
Volume: 6
Page(s): 703 - 707
ISSN (Electronic): 2168-6734
DOI: 10.1109/JEDS.2018.2841374
Regular:

We present a contactless method capable of characterizing a high electron mobility transistor (HEMT) heterostructure at the wafer stage, right after its growth, before any production process has... View More

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