IEEE - Institute of Electrical and Electronics Engineers, Inc. - Transition Metal Dichalcogenide-Based Field-Effect Transistors for Analog/Mixed-Signal Applications

Author(s): Brajesh Rawat ; Vinaya M. M. ; Roy Paily
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 7
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2906235
Regular:

Transition metal dichalcogenides (TMDs), such as MoS₂, MoSe₂, MoTe₂, WS₂, WSe₂, etc., have been considered as the most promising candidates for energy-efficient... View More

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