IEEE - Institute of Electrical and Electronics Engineers, Inc. - Extraction of Packaged GaN Power Transistors Parasitics Using S-Parameters

Author(s): L. Pace ; N. Defrance ; A. Videt ; N. Idir ; J.-C. De Jaeger ; V. Avramovic
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 6
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2909152
Regular:

In order to better predict the high-frequency switching operation of transistors in power converters, parasitic elements of these devices such as resistances, inductances, and capacitances must be... View More

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