IEEE - Institute of Electrical and Electronics Engineers, Inc. - Implementation of Self-aligned Top-gate Amorphous Zinc Tin Oxide Thin Film Transistors

Author(s): Gang Wang ; Baozhu Chang ; Huan Yang ; Xiaoliang Zhou ; Letao Zhang ; Xiaodong Zhang ; Shengdong Zhang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2019.2910462
Regular:

Self-aligned top-gate amorphous zinc tin oxide thin film transistors (a-ZTO TFTs) are fabricated for the first time. Ar plasma treatment forms the self-aligned source/drain (S/D) region and... View More

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