IEEE - Institute of Electrical and Electronics Engineers, Inc. - GaN-on-Diamond HEMT Technology with T $_{AVG}$ = 176 °C at P $_{DC,max}$ = 56 W/mm Measured by Transient Thermoreflectance Imaging

Author(s): Marko J. Tadjer ; Travis J. Anderson ; Mario G. Ancona ; Peter E. Raad ; Pavel Komarov ; Tingyu Bai ; James C. Gallagher ; Andrew D. Koehler ; Mark S. Goorsky ; Daniel A. Francis ; Karl D. Hobart ; Fritz J. Kub
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2019.2909289
Regular:

Record DC power has been demonstrated in AlGaN/GaN high electron mobility transistors fabricated using a substrate replacement process in which a thick diamond substrate is grown by chemical vapor... View More

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