IEEE - Institute of Electrical and Electronics Engineers, Inc. - Temperature Dependent Analytical DC Model for Wide Bandgap MESFETs

Author(s): Saif-Ur-Rehman Saif-Ur-Rehman ; Umer F. Ahmed ; Muhammad M. Ahmeda ; Muhammad N. Khan.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 2169-3536
DOI: 10.1109/ACCESS.2019.2910246
Regular:

In! this paper an analytical model has been developed to predict DC characteristics of wide bandgap metal semiconductor field effect transistors (MESFETs). The model evaluates potential... View More

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