IEEE - Institute of Electrical and Electronics Engineers, Inc. - IGBT Junction Temperature Measurements: Inclusive of Dynamic Thermal Parameters

Author(s): Jiangyong Zhang ; Mingxing Du ; Lei Jing ; Kexin Wei ; William Gerard Hurley
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-2574
ISSN (Paper): 1530-4388
DOI: 10.1109/TDMR.2019.2910182
Regular:

Insulated gate bipolar transistors (IGBTs) are widely used in new energy fields such as wind power converters and electric vehicles. The junction temperature characteristics and junction... View More

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