IEEE - Institute of Electrical and Electronics Engineers, Inc. - Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements

Author(s): A. Cutivet ; G. Pavlidis ; B. Hassan ; M. Bouchilaoun ; C. Rodriguez ; A. Soltani ; S. Graham ; F. Boone ; H. Maher
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 7
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2906943
Regular:

This paper details an extraction procedure to fully model the transient self-heating of transistors from a GaN HEMT technology. Frequency-resolved gate resistance thermometry (f-GRT) is used to... View More

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