IEEE - Institute of Electrical and Electronics Engineers, Inc. - Reliability Modeling and Analysis of Hot-Carrier Degradation in Multiple-Fin SOI n-Channel FinFETs With Self-Heating

Author(s): Anshul Gupta ; Charu Gupta ; Reinaldo A. Vega ; Terence B. Hook ; Abhisek Dixit
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 6
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2905053
Regular:

A comprehensive study on hot-carrier degradation (HCD) mechanisms in 14 nm silicon-on-insulator (SOI) n-channel FinFETs is presented. The impact of high-frequency AC stress bias on... View More

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