IEEE - Institute of Electrical and Electronics Engineers, Inc. - Impact of Sputtering Power on Amorphous In-Al-Zn-O Films and Thin Film Transistors Prepared by RF Magnetron Sputtering

Author(s): Weidong Xu ; Meng Xu ; Jianfeng Jiang ; Sanjin Xu ; Xianjin Feng
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 5
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2906892
Regular:

High-performance In-Al-Zn-O (IAZO) films and thin film transistors (TFTs) were fabricated using RF magnetron sputtering. The influence of sputtering power (90-250 W) on the film properties and... View More

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