IEEE - Institute of Electrical and Electronics Engineers, Inc. - REACT: Read/Write Error Rate Aware Coding Technique for Emerging STT-MRAM Caches

Author(s): Ensieh Aliagha ; Amir Mahdi Hosseini Monazzah ; Hamed Farbeh
Sponsor(s): IEEE Magnetics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 8
ISSN (Electronic): 1941-0069
ISSN (Paper): 0018-9464
DOI: 10.1109/TMAG.2019.2905523
Regular:

Spin-transfer torque magnetic RAMs (STT-MRAMs) are the most promising alternative for static random-access memories in large last-level on-chip caches due to their higher density and near-zero... View More

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