IEEE - Institute of Electrical and Electronics Engineers, Inc. - Radio-Frequency Polymer Field-Effect Transistors Characterized by S-Parameters

Author(s): M. Giorgio ; M. Caironi
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2019.2909844
Regular:

Thanks to recent progress in terms of materials properties, polymer field-effect transistors (FETs) operating in the MHz range can be achieved. However, further development towards challenging... View More

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