IEEE - Institute of Electrical and Electronics Engineers, Inc. - Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques

Author(s): B. Ullmann ; K. Puschkarsky ; M. Waltl ; H. Reisinger ; T. Grasser
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-2574
ISSN (Paper): 1530-4388
DOI: 10.1109/TDMR.2019.2909993
Regular:

The experimental characterization of the threshold voltage shift in metal-oxide-semiconductor field-effect transistors due to degradation mechanisms like bias temperature instability and... View More

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