CES - A review of gallium nitride power device and its applications in motor drive

Author(s): Xiaofeng Ding ; Yang Zhou ; Jiawei Cheng
Publisher: CES
Publication Date: 1 March 2019
Volume: 3
Page(s): 54 - 64
ISSN (Paper): 2096-3564
DOI: 10.30941/CESTEMS.2019.00008
Regular:

Wide band-gap gallium nitride (GaN) device has the advantages of large band-gap, high electron mobility and low dielectric constant. Compared with traditional Si devices, these advantages make it... View More

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