IEEE - Institute of Electrical and Electronics Engineers, Inc. - Negative Capacitance Oxide Thin Film Transistor with sub-60 mV/decade Subthreshold Swing

Author(s): Yuxing Li ; Renrong Liang ; Jiabin Wang ; Chunsheng Jiang ; Benkuan Xiong ; Houfang Liu ; Zhibo Wang ; Xuefeng Wang ; Yu Pang ; He Tian ; Yi Yang ; Tian-Ling Ren
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2019.2907988
Regular:

In this letter, we demonstrate an integrated negative capacitance oxide thin film transistor (NC-OTFT) based on ferroelectric Hf0.5Zr0.5O2 (HfZrO) film. The buried-gated TiN/HfZrO/Al2O3 structure... View More

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