IEEE - Institute of Electrical and Electronics Engineers, Inc. - Temperature-Dependent Low-Frequency Noise in Indium-Zinc-Oxide Thin-Film Transistors Down to 10 K

Author(s): Yuan Liu ; Hongyu He ; Ya-Yi Chen ; Rongsheng Chen ; Li Wang ; Shuting Cai ; Xiaoming Xiong
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 6
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2902449
Regular:

The carrier transport mechanisms in indium-zinc-oxide thin-film transistors are investigated in this paper by use of low-frequency noise (LFN). First, LFNs are measured in the range from 10 to 300... View More

Advertisement