IEEE - Institute of Electrical and Electronics Engineers, Inc. - NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling

Author(s): K.-U. Giering ; K. Puschkarsky ; H. Reisinger ; G. Rzepa ; G. Rott ; R. Vollertsen ; T. Grasser ; R. Jancke
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 7
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2901907
Regular:

We investigate the negative-bias temperature instability (NBTI) degradation and recovery of pMOSFETs under continuously varying analog-circuit stress voltages and thereby generalize existing... View More

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