IEEE - Institute of Electrical and Electronics Engineers, Inc. - Signal and Noise Performance of a 110 nm CMOS Technology for Photon Science Applications

Author(s): Gianluca Traversi ; Roberto Dinapoli ; Massimo Manghisoni ; Aldo Mozzanica ; Elisa Riceputi
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-1578
ISSN (Paper): 0018-9499
DOI: 10.1109/TNS.2019.2903982
Regular:

This work presents a study of the noise behavior of MOSFET devices belonging to a 110 nm CMOS technology in view of applications to the design of low-noise, low-power analog circuits in X-ray... View More

Advertisement