IEEE - Institute of Electrical and Electronics Engineers, Inc. - Output Capacitance Loss Characterization of Silicon Carbide Schottky Diodes

Author(s): Zikang Tong ; Grayson Zulauf ; JiaLe Xu ; James D. Plummer ; Juan Rivas-Davila
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 2168-6785
ISSN (Paper): 2168-6777
DOI: 10.1109/JESTPE.2019.2904290
Regular:

In high-frequency (HF) and very high-frequency (VHF) rectifiers, silicon carbide (SiC) Schottky diodes exhibit higher losses compared to what is reported in manufacturerprovided simulation... View More

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