IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electrical Switching and Optical Bandgap Studies on Quaternary Ag-Doped Ge-Te-In Thin Films

Author(s): Diptoshi Roy ; G. Sreevidya Varma ; S. Asokan ; Chandasree Das
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 6
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2019.2898935
Regular:

Amorphous Ge₁₅Te₈₀₋ₓIn₅Agₓ (6 ≤ x ≤ 24) thin films prepared in sandwich geometry exhibit memory switching behavior unlike the bulk... View More

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