IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Band-Engineered One-Transistor DRAM with Improved Data Retention and Power Efficiency

Author(s): Eunseon Yu ; Seongjae Cho ; Hyungsoon Shin ; Byung-Gook Park
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2019.2902334
Regular:

In this letter, a one-transistor (1T) dynamic random-access memory (DRAM) with SiGe quantum well (QW) is proposed, and its performance is validated through technology computer-aided design (TCAD)... View More

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