IEC - International Electrotechnical Commission - IEC 63068-1:2019
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
published
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| Organization: | IEC - International Electrotechnical Commission |
| Publication Date: | 30 January 2019 |
| Status: | published |
| Page Count: | 23 |
| ICS Code (Other semiconductor devices): | 31.080.99 |
abstract:
IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and... View More
Document History
IEC 63068-1:2019
January 30, 2019
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and...