CPSS - Highly compact isolated gate driver with ultrafast overcurrent protection for 10 kV SiC MOSFETs

Author(s): Daniel Rothmund ; Dominik Bortis ; Johann W. Kolar
Publisher: CPSS
Publication Date: 1 December 2018
Volume: 3
Page(s): 278 - 291
ISSN (Paper): 2475-742X
DOI: 10.24295/CPSSTPEA.2018.00028
Regular:

Silicon Carbide (SiC) semiconductor technology offers the possibility to manufacture power devices with un-precedented blocking voltages in the range of 10...15 kV and superior switching... View More

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