IEEE - Institute of Electrical and Electronics Engineers, Inc. - GNRFET/MOSFET Conjunction Power Gating Structures

2018 IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS)

Author(s): Hader E. El-hmaily ; Rabab Ezz-Eldin ; A. I. A. Galal ; F. A. Hesham Hamed
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2018
Conference Location: Windsor, ON, Canada, Canada
Conference Date: 5 August 2018
Page(s): 21 - 24
ISBN (Electronic): 978-1-5386-7392-8
ISBN (USB): 978-1-5386-7391-1
ISSN (Electronic): 1558-3899
DOI: 10.1109/MWSCAS.2018.8624099
Regular:

Robust GNRFET/MOSFET Conjunction is employed to build various power gating structures using 16nm technology. The evolved Power Gating (PG) structure is composed of GNRFET as a footer sleep... View More

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