IEEE - Institute of Electrical and Electronics Engineers, Inc. - AlInAsSb Impact Ionization Coefficients

Author(s): Yuan Yuan ; Jiyuan Zheng ; Ann K. Rockwell ; Stephen D. March ; Seth R. Bank ; Joe C. Campbell
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1941-0174
ISSN (Paper): 1041-1135
DOI: 10.1109/LPT.2019.2894114
Regular:

Digital alloy AlInAsSb avalanche photodiodes exhibit low excess noise comparable to those fabricated from Si. The electron and hole ionization coefficients are critical parameters for simulation... View More

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