IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low Frequency Noise Characteristics in Multilayer MoTe2 FETs with Hydrophobic Amorphous Fluoropolymers

Author(s): Seung Gi Seo ; Jong Hun Hong ; Jae Hyeon Ryu ; Sung Hun Jin
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2018.2889904
Regular:

This paper investigates the low-frequency noise (LFN) properties of multilayer MoTe2 field effect transistors (FETs) before and after hydrophobic amorphous polymer (CYTOP) encapsulation in the... View More

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