IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improved Performance of CMOS Terahertz Detectors by Reducing MOSFET Parasitic Capacitance

Author(s): Qixuan Yang ; Xiaoli Ji ; Yue Xu ; Feng Yan
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 2169-3536
DOI: 10.1109/ACCESS.2018.2889154
Regular:

The parasitic circuit elements significantly affect rectification performance of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices. In this paper, we develop a gate-source... View More

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