IEEE - Institute of Electrical and Electronics Engineers, Inc. - High power 810 nm passively mode-locked laser diode with Al-free active region

Author(s): Quentin Gaimard ; Quentin Gaimard ; Guy Aubin ; Kamel Merghem ; Michel Krakowski ; Olivier Parillaud ; Sylvain Barbay ; Abderrahim Ramdane
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (CD): 1943-0647
ISSN (Electronic): 1943-0655
DOI: 10.1109/JPHOT.2018.2886460
Regular:

We report on a mode locked semiconductor laser for high-power pulse generation in the 810 nm waveband. This is based on a novel GaAsP/GaInP single quantum-well structure, with Aluminum-free active... View More

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