IEEE - Institute of Electrical and Electronics Engineers, Inc. - A High-reliability Reading Scheme for STT-MRAM with a Symmetric Dual-reference Sensing Amplifier

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Author(s): Jin Yan ; Dong-Sheng Liu ; Hong-Mei Yu ; Hao Meng ; Peng Liu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2018
Conference Location: Qingdao, China, China
Conference Date: 31 October 2018
Page(s): 1 - 3
ISBN (CD): 978-1-5386-4439-3
ISBN (Electronic): 978-1-5386-4441-6
ISBN (Paper): 978-1-5386-4440-9
DOI: 10.1109/ICSICT.2018.8565729
Regular:

Spin transfer torque magnetic random access memory (STT-MRAM) is one of the most promising new type of non-volatile memory. A lot of research has been made to push it to be the universal memory... View More

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