IEEE - Institute of Electrical and Electronics Engineers, Inc. - TCAD Simulations of Nano-scale Functional Neuron MOSFETs with Splitted Gate Bias on Floating Gate

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Author(s): Hao-Yu Kong ; Guan-Qing Wang ; Lei Sun
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2018
Conference Location: Qingdao, China, China
Conference Date: 31 October 2018
Page(s): 1 - 3
ISBN (CD): 978-1-5386-4439-3
ISBN (Electronic): 978-1-5386-4441-6
ISBN (Paper): 978-1-5386-4440-9
DOI: 10.1109/ICSICT.2018.8564935
Regular:

The basic structure and operation mechanism of the neuron MOSFET with splitted gate bias on floating gate are introduced in this paper. 14nm channel-length two-input-gate neuron MOSFET on bulk... View More

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