IEEE - Institute of Electrical and Electronics Engineers, Inc. - 3D AND-type NVM for In-Memory Computing of Artificial Intelligence

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Author(s): Hang-Ting Lue ; Keh-Chung Wang ; Chih-Yuan Lu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2018
Conference Location: Qingdao, China, China
Conference Date: 31 October 2018
Page(s): 1 - 2
ISBN (CD): 978-1-5386-4439-3
ISBN (Electronic): 978-1-5386-4441-6
ISBN (Paper): 978-1-5386-4440-9
DOI: 10.1109/ICSICT.2018.8564919
Regular:

We introduce a novel 3D AND-type NVM suitable for in-memory computing for AI applications. The structure resembles our SGVC 3D NAND, but we introduce a vertical buried diffusion (BD) line that... View More

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