IEEE - Institute of Electrical and Electronics Engineers, Inc. - Multilevel Resistive Switching in Heterogeneous Oxide System Based on TiO 2 /Al 2 O 3 Bilayers for ReRAM Applications: Problems and Prospects

2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)

Author(s): Alexandr E. Sinev ; Natalia V. Andreeva ; Anatoly A. Petrov ; Anton A. Bobkov
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2018
Conference Location: Saint Petersburg, Russia, Russia
Conference Date: 22 October 2018
Page(s): 189 - 191
ISBN (CD): 978-1-5386-8121-3
ISBN (Electronic): 978-1-5386-8122-0
DOI: 10.1109/EExPolytech.2018.8564403
Regular:

Thin film oxide bilayers are prospective systems for application in ReRAM devices. Its resistance state could be electrically tuned in the range of seven orders of magnitude. Together with a... View More

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