IEEE - Institute of Electrical and Electronics Engineers, Inc. - New Short Circuit Failure Mechanism for 1.2kV 4H-SiC MOSFETs and JBSFETs

2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

Author(s): Kijeong Han ; Ajit Kanale ; B. J. Baliga ; Bahji Ballard ; Adam Morgan ; Douglas C. Hopkins
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2018
Conference Location: Atlanta, GA, USA, USA
Conference Date: 31 October 2018
Page(s): 108 - 113
ISBN (Electronic): 978-1-5386-5909-0
ISBN (USB): 978-1-5386-5908-3
DOI: 10.1109/WiPDA.2018.8569178
Regular:

The short circuit (SC-SOA) capability of power devices is crucial for power systems. In this paper, 1.2 kV SiC MOSFETs and JBSFETs are characterized, and their SC-SOA behavior was tested and... View More

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