IEEE - Institute of Electrical and Electronics Engineers, Inc. - Power Cycling of Commercial SiC MOSFETs

2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

Author(s): Thomas Ziemann ; Ulrike Grossner ; Jurg Neuenschwander
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2018
Conference Location: Atlanta, GA, USA, USA
Conference Date: 31 October 2018
Page(s): 24 - 31
ISBN (Electronic): 978-1-5386-5909-0
ISBN (USB): 978-1-5386-5908-3
DOI: 10.1109/WiPDA.2018.8569138
Regular:

The robustness under power cycling of three comparable silicon carbide MOSFETs in TO-247 packages from three different manufacturers is investigated, with silicon IGBTs serving as reference. The... View More

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