IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization of Intrinsic Capacitances of Power Transistors Under High Current Conduction Based on Pulsed S-Parameter Measurements

2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

Author(s): Cristino Salcines ; Bernhard Holzinger ; Ingmar Kallfass
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2018
Conference Location: Atlanta, GA, USA, USA
Conference Date: 31 October 2018
Page(s): 180 - 184
ISBN (Electronic): 978-1-5386-5909-0
ISBN (USB): 978-1-5386-5908-3
DOI: 10.1109/WiPDA.2018.8569185
Regular:

This work presents a measurement technique to characterize the intrinsic capacitances of power transistors under high current conduction. By using a network analyzer, a curve tracer and custom... View More

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