IEEE - Institute of Electrical and Electronics Engineers, Inc. - Non-linear Input Capacitance Determination of WBG Power FETs using Gate Charge Measurements

2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

Author(s): Holger Gerstner ; Achim Endruschat ; Thomas Heckel ; Christopher Joffe ; Bernd Eckardt ; Martin Marz
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2018
Conference Location: Atlanta, GA, USA, USA
Conference Date: 31 October 2018
Page(s): 247 - 253
ISBN (Electronic): 978-1-5386-5909-0
ISBN (USB): 978-1-5386-5908-3
DOI: 10.1109/WiPDA.2018.8569089
Regular:

This paper discusses the measurement of the input capacitances Cgs and Cgd of SiC and GaN power FETs in order to implement simulation models with an improved mapping of the drain-source voltage... View More

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