IEEE - Institute of Electrical and Electronics Engineers, Inc. - Progressive ECC Techniques for Phase Change Memory

2018 IEEE 27th Asian Test Symposium (ATS)

Author(s): Shyue-Kung Lu ; Hui-Ping Li ; Kohei Miyase
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2018
Conference Location: Hefei, China, China
Conference Date: 15 October 2018
Page(s): 161 - 166
ISBN (Electronic): 978-1-5386-9466-4
ISSN (Electronic): 2377-5386
DOI: 10.1109/ATS.2018.00039
Regular:

Phase change memory (PCM) is considered as the most promising alternative of DRAM. However, it has the inevitable endurance problem of the storage cells. The limited endurance and other permanent... View More

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