IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Numerical Simulation of C₃N Nanoribbon-Based Field-Effect Transistors

Author(s): Tiancheng Zhang ; Hui Zeng ; Dazhi Ding ; R. S. Chen
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 5
ISSN (Electronic): 1557-9646
ISSN (Paper): 0018-9383
DOI: 10.1109/TED.2018.2883298
Regular:

In this paper, the electron transport properties of a C₃N nanoribbon-based field-effect transistor (FET) in the ballistic regime have been simulated. Using the density-functional theory... View More

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