IEEE - Institute of Electrical and Electronics Engineers, Inc. - Mid Infrared GaN/AlGaN Quantum Cascade Detector Grown On Silicon

Author(s): Ben Dror ; Y. Zheng ; M. Agrawal ; K. Radhakrishnan ; Meir Orenstein ; Gad Bahir
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 1558-0563
ISSN (Paper): 0741-3106
DOI: 10.1109/LED.2018.2885611
Regular:

We demonstrate the first implementation of a GaN-based infrared photodetector epitaxially grown on silicon. The device is a GaN/AlGaN quantum cascade detector which consists of layered quantum... View More

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