IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characteristics of Charge Persistence in InGaAs/InP Single-Photon Avalanche Diode

Author(s): Yi-Shan Lee ; Kuan-Yu Chen ; Sheng-Yu Chien ; Shih-Cheng Chang
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 15 November 2018
Volume: 30
Page(s): 1,980 - 1,982
ISSN (Electronic): 1941-0174
ISSN (Paper): 1041-1135
DOI: 10.1109/LPT.2018.2874041
Regular:

We present an experimental study of charge persistence effect in InGaAs/InP single-photon avalanche diodes based on their dark and illuminated characteristics. It is well known that the sources of... View More

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