IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Lumped RF Model for Nanoscale Memristive Devices and Nonvolatile Single-Pole Double-Throw Switches

Author(s): Nicolas Wainstein ; Shahar Kvatinsky
Sponsor(s): IEEE Nanotechnology Council
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2018
Volume: 17
Page(s): 873 - 883
ISSN (Electronic): 1941-0085
ISSN (Paper): 1536-125X
DOI: 10.1109/TNANO.2018.2793354
Regular:

In this paper, a scalable lumped model that accurately predicts the steady-state high-frequency behavior of nanoscale RF memristive devices is presented. The model is described 1) analytically by... View More

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