IEEE - Institute of Electrical and Electronics Engineers, Inc. - Uniformity Improvement of SiN x -Based Resistive Switching Memory by Suppressed Internal Overshoot Current

Author(s): Min-Hwi Kim ; Sungjun Kim ; Suhyun Bang ; Tae-Hyeon Kim ; Dong Keun Lee ; Seongjae Cho ; Byung-Gook Park
Sponsor(s): IEEE Nanotechnology Council
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2018
Volume: 17
Page(s): 824 - 828
ISSN (Electronic): 1941-0085
ISSN (Paper): 1536-125X
DOI: 10.1109/TNANO.2018.2842071
Regular:

In this paper, we have investigated the effect of additional thin SiO2 layer on switching variability of SiNx-based resistive memory (RRAM). We found that excessive LRS state... View More

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