IEEE - Institute of Electrical and Electronics Engineers, Inc. - Hybrid Analog/Digital Linearization of GaN HEMT-Based Power Amplifiers

Author(s): Pedro M. Tome ; Filipe M. Barradas ; Telmo R. Cunha ; Jose Carlos Pedro
Sponsor(s): IEEE Microwave Theory and Techniques Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 7
ISSN (Electronic): 1557-9670
ISSN (Paper): 0018-9480
DOI: 10.1109/TMTT.2018.2880911
Regular:

In this paper, we describe a hybrid analog/digital linearization scheme for GaN high-electron-mobility transistor (HEMT)-based power amplifiers that consists of a novel analog feedforward... View More

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