IEEE - Institute of Electrical and Electronics Engineers, Inc. - Chemical Stability and Performance of Doped Silicon Oxide Layers for Use in Thin-Film Silicon Solar Cells

Author(s): Thierry de Vrijer ; Fai Tong Si ; Hairen Tan ; Arno Hendrikus Marie Smets
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1 - 9
ISSN (Electronic): 2156-3403
ISSN (Paper): 2156-3381
DOI: 10.1109/JPHOTOV.2018.2882650
Regular:

Doped hydrogenated silicon oxide layers (SiO$_\text{X}$:H) have recently been successfully integrated as front window layers, back reflector layers, intermediate reflector layers, passivation... View More

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