IEEE - Institute of Electrical and Electronics Engineers, Inc. - On the Origin of the Coss-Losses in Soft-Switching GaN-on-Si Power HEMTs

Author(s): Mattia Guacci ; Morris Heller ; Dominik Neumayr ; Dominik Bortis ; Johann W. Kolar ; Gerald Deboy ; Clemens Ostermaier ; Oliver Haberlen
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Volume: PP
Page(s): 1
ISSN (Electronic): 2168-6785
ISSN (Paper): 2168-6777
DOI: 10.1109/JESTPE.2018.2885442
Regular:

The unprecedented performance potential of Gallium- Nitride-on-Silicon (GaN-on-Si) High Electron Mobility Transistors (HEMTs) is seen as the key enabler for the design of power converters... View More

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