IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Digital-Intensive 2-to-9.2 GB/S/Pin Memory Controller I/O with Fast-Response LDO in 10NM CMOS

2018 IEEE Symposium on VLSI Circuits

Author(s): Rajesh Inti ; Mozhgan Mansuri ; Joe Kennedy ; Hariprasath Venkatram ; Chun-Ming Hsu ; Aaron Martin ; James Jaussi ; Bryan Casper
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2018
Conference Location: Honolulu, HI, USA
Conference Date: 18 June 2018
Page(s): 151 - 152
ISBN (Electronic): 978-1-5386-4214-6
DOI: 10.1109/VLSIC.2018.8502323
Regular:

The proposed digital-intensive LPDDR5 I/O architecture operates from 2 to 9.2Gb/s. The LDO-based ADDLL operates at 1-5GHz with ≥14dB PSRR. Fast-response LDO enhanced with feed-forward (FF)... View More

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