IEEE - Institute of Electrical and Electronics Engineers, Inc. - 12-NM Fin-FET 3.0G-Search/s 80-Bit × 128-Entry Dual-Port Ternary CAM

2018 IEEE Symposium on VLSI Circuits

Author(s): Makoto Yabuuchi ; Masao Morimoto ; Koji Nii ; Shinji Tanaka
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2018
Conference Location: Honolulu, HI, USA
Conference Date: 18 June 2018
Page(s): 19 - 20
ISBN (Electronic): 978-1-5386-4214-6
DOI: 10.1109/VLSIC.2018.8502345
Regular:

A new 20T bitcell for dual-port (DP) ternary content addressable memory (TCAM) is proposed. To reduce the search power, we newly introduced self-adjust reference match amplifier circuit with... View More

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